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Products meeting the search criteria
Model: NPN
2N2222 NPN Transistor
Description:
2N2222 NPN Switching Transistors
Low Power Bipolar Transistors
Features:
High current (max. 800 mA)
Low voltage (max. 40 V).
TO-92 Package
Applications:
Switching
Medium power amplifier..
$ 0.35
Ex Tax:$ 0.35
Model: TTR
LCR- ESR Transistor Tester
Description:
Multi-functional transistor tester for automatic detection of NPN and PNP transistors, N-channel and P-channel MOSFET, diodes, thyristors, resistors, capacitors or other devices. Easy and convenient to operate.
Features:
128*160 TFT color displa..
$ 141.00
Ex Tax:$ 141.00
Model: LCR-T4
This is LCR-T4 12864 LCD Graphical Transistor Tester Resistance Capacitance ESR SCR Meter. It is powered by 9V layer-built battery or can use 2 li-ion batteries to form a 8.4V battery pack for long time power. This tester can be use to measure bipolar transistor current amplification factor and base..
$ 45.12
Ex Tax:$ 45.12
Model: 2N2907
2N2907 PNP Transistor
Description:
2N2907 PNP Switching Transistors
Low Power Bipolar Transistors
Specification:
High current (max. 600 mA)
Low voltage (max. 60 V)
High Speed tf = 30nS
hFE3 = 40 ~ 100
TO-92 Package
Applications:
Switching
Medium power amplifier
Gener..
$ 0.49
Ex Tax:$ 0.49
Model: 2SC3552
2SC3552 Transistor 12A 800V
Description:
2SC3552 NPN Switching Transistors
High Power Bipolar Transistors
Specification:
High current (max. 12A)
High voltage (max. 800 V).
High Voltage VCBO = 1100V
High Speed tf = 0.15uS
High Breakdown Voltage
MT-100(TO3P) Package..
$ 5.64
Ex Tax:$ 5.64
Model: 2SC4237
2SC4237 Transistor 10A 800V
Description:
2SC4237 NPN Switching Transistors
High Power Bipolar Transistors
Specification:
High current (max. 10A)
High voltage (max. 800 V).
High Voltage VCBO = 1200V
High Speed tf = 0.3uS
High Breakdown Voltage
MTO-3P Package
Applicati..
$ 5.64
Ex Tax:$ 5.64
Model: 2SC4584
2SC4584 Transistor 6A 800V
Description:
2SC4584 NPN Switching Transistors
High Power Bipolar Transistors
Specification:
High current (max. 6A)
High voltage (max. 800 V).
High Voltage VCBO = 1200V
High Speed tf = 0.3uS
High Breakdown Voltage
ITO-3P Package
Appli..
$ 4.94
Ex Tax:$ 4.94
Model: IRF640
IRF640 N-Channel Power MOSFET 200V 18A
Description:
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commer..
$ 9.87
Ex Tax:$ 9.87
Model: 2SD1403
2SD1403 Transistor 6A 600V With Freewheeling Diode
Description:
2SD1403 NPN Switching Transistors With Freewheeling Diode
High Power Bipolar Transistors
Specification:
With Freewheeling Diode
High current (max. 6A)
High voltage (max. 600 V).
High Voltage VCBO = 1500V
High Speed ..
$ 6.35
Ex Tax:$ 6.35
Model: IRF540N
IRF540N N-Channel Power MOSFET 100V 33A
Description:
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized..
$ 8.46
Ex Tax:$ 8.46
Model: 2SC4706
2SC4706 Transistor 14A 600V
Description:
2SC4706 NPN Switching Transistors
High Power Bipolar Transistors
Specification:
High current (max. 14A)
High voltage (max. 600 V).
High Voltage VCBO = 600V
High Speed tf = 0.7uS
MT-100(TO3P) Package
Applications:
High Speed Sw..
$ 8.46
Ex Tax:$ 8.46
Model: BD136
BD136 PNP Transistor 1.5A 45V
Description:
BD136 PNP Epitaxial Silicon Transistor
Bipolar Transistors
Specification:
High current (max. 1.5A)
High voltage (max. 45 V).
High Voltage VCBO = 45V
hFE3 = 40 ~ 100
TO-126 Package
Applications:
Switching Transistors
Voltage Regulator
..
$ 1.41
Ex Tax:$ 1.41
Model: BD137
BD137 NPN Transistor 1.5A 45V
Description:
BD137 NPN Epitaxial Silicon Transistor
Bipolar Transistors
Specification:
High current (max. 1.5A)
High voltage (max. 45 V).
High Voltage VCBO = 45V
hFE3 = 40 ~ 100
TO-126 Package
Applications:
Switching Transistors
Voltage Regulator
..
$ 1.41
Ex Tax:$ 1.41
Model: K50T60
K50T60 IGBT 600V 80A
DESCRIPTION:
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time ..
$ 11.28
Ex Tax:$ 11.28
Model: 2SC5150
2SC5150 Transistor 10A 700V
Description:
2SC5150 NPN Switching Transistors
High Power Bipolar Transistors
Specification:
High current (max. 10A)
High voltage (max. 700 V).
High Voltage VCBO = 1700V
High Speed tf = 0.15uS
2-16E3A Package
Applications:
High Speed ..
$ 7.05
Ex Tax:$ 7.05
Model: BUZ90
BUZ90 Transistor 4.5A 600V
Description:
BUZ90 N channel Power Transistors - Switching Transistors
Enhancement mode
Avalanche rated
Specification:
Continuous drain current (max. 4.5A)
Drain-source breakdown voltage (max. 600 V).
High Speed tf = 70nS
TO-220 AB Packag..
$ 4.23
Ex Tax:$ 4.23
Model: BU2520AX
BU2520AX Transistor 10A 800V
Description:
BU2520AX NPN Switching Transistors
High Power Bipolar Transistors
Specification:
High current (max. 10A)
High voltage (max. 800 V).
High Voltage VCBO = 1500V
High Speed tf = 0.2uS
High Breakdown Voltage
SOT399 Package..
$ 6.35
Ex Tax:$ 6.35
Model: IRF830
..
$ 5.64
Ex Tax:$ 5.64
Model: 2SD1886
2SD1886 Transistor 8A 800V
Description:
2SD1886 NPN Switching Transistors
High Power Bipolar Transistors
Specification:
High current (max. 8A)
High voltage (max. 800 V).
High Voltage VCBO = 1500V
High Speed tf = 100ns
High Breakdown Voltage
TO-3PMLPackage
Appli..
$ 7.05
Ex Tax:$ 7.05
Model: BDW93C
BDW93C 12A 100V NPN Darlington Transistors
Description:
BDW93C NPN Switching Darlington Transistors With Freewheeling Diode
High Power Bipolar Transistors
Specification:
With Freewheeling Diode
High current (max. 12A)
High voltage (max. 100 V)
High Voltage VCBO = 100V
High Speed..
$ 7.76
Ex Tax:$ 7.76
Model: IRF840
..
$ 8.46
Ex Tax:$ 8.46
Model: 2SD2251
2SD2251 Transistor 7A 800V
Description:
2SD2251 NPN Switching Transistors With Freewheeling Diode
High Power Bipolar Transistors
Specification:
With Freewheeling Diode
High current (max. 7A)
High voltage (max. 800 V).
High Voltage VCBO = 1500V
High Speed tf = 0.3uS
High Breakdo..
$ 6.35
Ex Tax:$ 6.35